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| AO3701 P-Channel Enhancement Mode Field Effect Transistor with Schottky Diode General Description The AO3701 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. A Schottky diode is provided to facilitate the implementation of a bidirectional blocking switch, or for DC-DC conversion applications. It is ESD protected. Standard Product AO3701 is Pb-free (meets ROHS & Sony 259 specifications). AO3701L is a Green Product ordering option. AO3701 and AO3701L are electrically identical. SOT-23-5 Top View G S A 1 2 3 5 4 D K Features VDS (V) = -20V ID = -3A (VGS = -10V) RDS(ON) < 80m (VGS = -10V) RDS(ON) < 100m (VGS = -4.5V) RDS(ON) < 145m (VGS = -2.5V) ESD Rating: 2000V HBM SCHOTTKY VDS (V) = 20V, I F = 1A, VF<0.5V@0.5A D K G S A Absolute Maximum Ratings T A=25C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage Gate-Source Voltage TA=25C Continuous Drain Current Pulsed Drain Current B A MOSFET -20 12 -3 -2.3 -10 Schottky Units V V A VGS TA=70C ID IDM VKA TA=25C A Schottky reverse voltage Continuous Forward Current Pulsed Forward Current Power Dissipation Junction and Storage Temperature Range Parameter: Thermal Characteristics MOSFET t 10s Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Thermal Characteristics Schottky Maximum Junction-to-Ambient Maximum Junction-to-Ambient Maximum Junction-to-Lead C A A B TA=70C TA=25C TA=70C IF IFM PD TJ, TSTG Symbol RJA RJL RJA RJL 1.14 0.72 -55 to 150 Typ 80.3 117 43 109.4 136.5 58.5 20 2 1 10 0.92 0.59 -55 to 150 Max 110 150 80 135 175 80 V A W C Units C/W Steady-State Steady-State t 10s Steady-State Steady-State C/W Alpha & Omega Semiconductor, Ltd. AO3701 Electrical Characteristics (TJ=25C unless otherwise noted) Symbol Parameter Conditions ID=-250A, VGS=0V VDS=-16V, VGS=0V TJ=55C VDS=0V, VGS=10V VDS=0V, VGS=12V VDS=VGS ID=-250A VGS=-4.5V, VDS=-5V VGS=-10V, ID=-3A RDS(ON) Static Drain-Source On-Resistance TJ=125C VGS=-4.5V, ID=-2A VGS=-2.5V, ID=-1A gFS VSD IS Forward Transconductance VDS=-5V, ID=-3A -0.65 Diode Forward Voltage IS=-1A,VGS=0V Maximum Body-Diode Continuous Current -0.6 -10 65 91 82 117 6.8 -0.8 -0.95 -2 512 VGS=0V, VDS=-10V, f=1MHz VGS=0V, VDS=0V, f=1MHz 77 62 9.2 5.5 VGS=-4.5V, VDS=-10V, ID=-3A 0.8 1.9 5 VGS=-10V, VDS=-10V, RL=2.8, RGEN=3 6.7 28 13.5 9.8 2.7 0.39 0.45 0.1 20 34 5.2 0.8 10 12 13 6.6 620 80 110 100 145 -0.9 Min -20 -0.5 -5 1 10 -1.4 Typ Max Units V A A V A m m m S V A pF pF pF nC nC nC ns ns ns ns ns nC V mA pF ns nC STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd tD(on) tr tD(off) tf trr Qrr Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time IF=-3A, dI/dt=100A/s Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=-3A, dI/dt=100A/s IF=0.5A VR=16V VR=16V, TJ=125C VR=10V IF=1A, dI/dt=100A/s IF=1A, dI/dt=100A/s SCHOTTKY PARAMETERS VF Forward Voltage Drop Irm CT trr Qrr Maximum reverse leakage current Junction Capacitance Schottky Reverse Recovery Time Schottky Reverse Recovery Charge A: The value of R JA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The value in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead R JL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using 80 s pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The SOA curve provides a single pulse rating. Rev1: May 2006 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AO3701 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 25 -10.0V 20 -6.0V -4.0V -ID (A) -3.0V 10 -2.5V -2.0V -ID(A) 15 6 -5.0V 8 10 VDS=-5V 4 125C 5 2 25C 0 0 1 2 3 4 5 -VDS (Volts) Fig 1: On-Region Characteristics 160 Normalized On-Resistance 140 120 RDS(ON) (m) 100 80 60 40 20 0 2 4 6 8 10 VGS=-10V VGS=-4.5V VGS=-2.5V 0 0 0.5 1 1.5 2 2.5 3 3.5 -VGS(Volts) Figure 2: Transfer Characteristics 1.6 ID=-2A, VGS=-4.5V 1.4 ID=-3A, VGS=-10V 1.2 ID=-1A, VGS=-2.5V 1.0 0.8 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 200 180 160 RDS(ON) (m) 140 120 100 80 60 40 0 2 4 6 8 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 25C ID=-3A -IS (A) 125C 1E+01 1E+00 125C 1E-01 1E-02 1E-03 1E-04 1E-05 1E-06 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -VSD (Volts) Figure 6: Body-Diode Characteristics 25C Alpha & Omega Semiconductor, Ltd. AO3701 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 5 ID=-3A Capacitance (pF) 600 800 4 -VGS (Volts) Ciss 3 400 2 1 200 Crss Coss 0 0 1 2 3 4 5 6 -Qg (nC) Figure 7: Gate-Charge Characteristics 0 0 5 10 15 20 -VDS (Volts) Figure 8: Capacitance Characteristics 100.0 TJ(Max)=150C TA=25C 10s 40 TJ(Max)=150C TA=25C 30 100s 1ms Power (W) -ID (Amps) 10.0 RDS(ON) limited 20 1.0 1s 10s DC 0.1 0.1 1 -VDS (Volts) 10 10ms 0.1s 10 100 0 0.001 0.01 0.1 1 10 100 1000 Figure 9: Maximum Forward Biased Safe Operating Area (Note E) Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) 10 ZJA Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=110C/W 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD Ton Single Pulse T 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. AO3701 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: SCHOTTKY 10 125C Capacitance (pF) 1 IF (Amps) 80 60 40 20 25C 0.001 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 VF (Volts) Figure 12: Schottky Forward Characteristics 0 0 5 10 15 20 VKA (Volts) Figure 13: Schottky Capacitance Characteristics 100 f = 1MHz 0.1 0.01 0.5 1.0E-02 0.4 VF (Volts) IF=0.5A 0.3 Leakage Current (A) 1.0E-03 1.0E-04 VR=16V 0.2 1.0E-05 0.1 0 25 50 75 100 Temperature (C) 125 150 1.0E-06 0 25 50 75 100 125 150 Temperature (C) Figure 15: Schottky Leakage current vs. Junction Temperature Figure 14: Schottky Forward Drop vs. Junction Temperature 10 ZJA Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=135C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 PD Ton Single Pulse T 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 15: Schottky Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. |
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